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The ve-layer asymmetric coupled quantum well (FACQW) is a speci c quantum well structure with tailored potential distribution. Electrorefractive characteristics and fabrication of the FACQW structures and their application to compact, ultrafast, and low operation voltage optical modulators and switches are investigated. Through numerical analyses, it is predicted that the FACQWs will have a giant electrorefractive sensitivity as large as 0.0004 cm/kV in the wide transparency wavelength region far from the absorption edge. If this e ect is fully utilized in Mach-Zehnder modulators and switches, compact and ultrafast devices with very low driving voltages and very wide wavelength ranges will become possible.


The ve-layer asymmetric coupled quantum well (FACQW) is a speci c quantum well structure with tailored potential distribution. Electrorefractive characteristics and fabrication of the FACQW structures and their application to compact, ultrafast, and low operation voltage optical modulators and switches are investigated. Through numerical analyses, it is predicted that the FACQWs will have a giant electrorefractive sensitivity as large as 0.0004 cm/kV in the wide transparency wavelength region far from the absorption edge. If this e ect is fully utilized in Mach-Zehnder modulators and switches, compact and ultrafast devices with very low driving voltages and very wide wavelength ranges will become possible.