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Y2O3:Eu3+ and Li-doped Y2O3:Eu3+ thin films have been grown on sapphire substrates using a pulsed laser deposition technique. The thin film phosphors were deposited at a substrate temperature of 600oC under the oxygen pressure of 100, 200 and 300 mTorr. The films grown under different deposition conditions have been characterized using microstructural and luminescent measurements. The crystallinity and photoluminescence (PL) of the films are highly dependent on the oxygen pressure. The PL brightness data obtained from Y2O3:Eu3+ films grown under optimized conditions have indicated that sapphire is one of the most promising substrate for the growth of high quality Y2O3:Eu3+ thin film red phosphor. In particular, the incorporation of Li+ ions into Y2O3 lattice could induce a remarkable increase of PL. The highest emission intensity was observed with LiF-doped Y1.84Li0.08Eu0.08O3 (Y2O3LiEu), whose brightness was increased by a factor of 2.7 in comparison with that of Y2O3:Eu3+ films. This phosphor may promise for application to the flat panel displays.