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We have measured the polarization-dependent photore ectance spectra of InGaP/GaAs quantum well structure. These quantum well specimens were grown by gas source molecular beam epitaxy at the growth temperature 440 C, 480 C and 520 C for C1007, C1008 and C1009, respectively. Each of these samples consists of a 7 nm GaAs well, 0.2 m (top) and 1 m (bottom) InGaP barrier. The properties of InGaP layer were obtained by characterized the InGaP/GaAs epilayer sample using double X-ray di raction and low temperature photoluminescence experiments. The results show that the strains of InGaP for all samples are less than 0.2 % and the ordered parameters are about 0.3. The PR spectra demonstrate the anisotropic optical properties. Besides, the energy di erences between the ground states are almost equal to the di erences between bandgap of the InGaP barrier. And the ground state energy is 4 meV less than GaAs bandgap for sample C1009. These results suggest that the transitions of QW structure strongly involve with the partial ordered InGaP barrier by type II band alignment.??


We have measured the polarization-dependent photore ectance spectra of InGaP/GaAs quantum well structure. These quantum well specimens were grown by gas source molecular beam epitaxy at the growth temperature 440 C, 480 C and 520 C for C1007, C1008 and C1009, respectively. Each of these samples consists of a 7 nm GaAs well, 0.2 m (top) and 1 m (bottom) InGaP barrier. The properties of InGaP layer were obtained by characterized the InGaP/GaAs epilayer sample using double X-ray di raction and low temperature photoluminescence experiments. The results show that the strains of InGaP for all samples are less than 0.2 % and the ordered parameters are about 0.3. The PR spectra demonstrate the anisotropic optical properties. Besides, the energy di erences between the ground states are almost equal to the di erences between bandgap of the InGaP barrier. And the ground state energy is 4 meV less than GaAs bandgap for sample C1009. These results suggest that the transitions of QW structure strongly involve with the partial ordered InGaP barrier by type II band alignment.??